Quantum interference may result in smaller, sooner, and extra energy-efficient transistors – Insta News Hub
Because the source-to-drain distance, d, of a transistor approaches the nanometer scale, quantum-tunneling-mediated transmission (ζ) by the potential power barrier that creates an off state will increase exponentially, resulting in excessive leakage present and degrading the system subthreshold swing (Ss-th). The supply–drain leakage turns into more and more problematic on the molecular scale (<5 nm) until
